EUV pellicle
E730662
An EUV pellicle is an ultra-thin, highly transparent protective membrane used in extreme ultraviolet lithography systems to shield photomasks from particle contamination during semiconductor manufacturing.
Statements (49)
| Predicate | Object |
|---|---|
| instanceOf |
lithography component
ⓘ
protective membrane ⓘ semiconductor manufacturing equipment component ⓘ |
| appliedTo |
EUV photomask
NERFINISHED
ⓘ
EUV reticle ⓘ |
| characteristic |
high EUV transmittance
ⓘ
high thermal stability ⓘ mechanical robustness under vacuum ⓘ ultra-thin membrane ⓘ |
| designedFor |
high numerical aperture EUV systems
ⓘ
high-power EUV exposure ⓘ vacuum environment ⓘ |
| engineeringRequirement |
compatibility with mask handling systems
ⓘ
high tensile strength ⓘ low surface roughness ⓘ uniform thickness ⓘ |
| facesChallenge |
maintaining flatness over large area
ⓘ
mechanical stress due to pressure differential ⓘ particle generation from pellicle itself ⓘ thermal loading from EUV source ⓘ |
| goal |
improve yield in semiconductor fabrication
ⓘ
maximize EUV transmission ⓘ minimize EUV reflectivity ⓘ minimize imaging distortion ⓘ reduce mask defectivity ⓘ |
| hasFunction |
keep particles away from EUV mask surface
ⓘ
maintain mask cleanliness during exposure ⓘ protect photomasks from particle contamination ⓘ |
| impact |
affects overall EUV system throughput
ⓘ
reduces mask cleaning frequency ⓘ reduces risk of printable defects from particles ⓘ |
| introducedFor | high-volume manufacturing with EUV ⓘ |
| material | thin-film membrane materials ⓘ |
| materialRequirement |
high melting point
ⓘ
low EUV absorption ⓘ low outgassing in vacuum ⓘ |
| operatesAt | 13.5 nm wavelength ⓘ |
| operationalConstraint |
must survive repeated exposure cycles
ⓘ
must withstand EUV-induced heating ⓘ |
| partOf |
EUV exposure optical path
ⓘ
EUV mask assembly ⓘ |
| protects |
EUV mask absorber structures
ⓘ
EUV mask multilayer mirror ⓘ EUV mask pattern area ⓘ |
| requires |
precision alignment to mask
ⓘ
specialized mounting frame ⓘ |
| usedIn |
EUV scanners
ⓘ
extreme ultraviolet lithography NERFINISHED ⓘ semiconductor manufacturing ⓘ |
Referenced by (1)
Full triples — surface form annotated when it differs from this entity's canonical label.