EUV mask
E730663
An EUV mask is a highly specialized reflective photomask used in extreme ultraviolet lithography to pattern nanometer-scale features onto semiconductor wafers.
Statements (55)
| Predicate | Object |
|---|---|
| instanceOf |
lithography mask
ⓘ
photomask ⓘ reflective mask ⓘ |
| designedFor |
EUV scanners
ⓘ
high numerical aperture lithography systems ⓘ |
| developedFor | high-volume manufacturing in EUV lithography ⓘ |
| hasChallenge |
CD (critical dimension) uniformity control
ⓘ
line-edge roughness control ⓘ mask 3D effects ⓘ mask defect mitigation ⓘ shadowing effects at high NA ⓘ |
| hasCoating | multilayer Mo/Si mirror stack ⓘ |
| hasFeature |
defect sensitivity at multilayer and absorber levels
ⓘ
multilayer Bragg reflector ⓘ patterned absorber ⓘ pellicle or protective membrane (in many production tools) ⓘ reflective operation at EUV wavelengths ⓘ |
| hasLayer |
absorber layer
ⓘ
backside coating ⓘ buffer layer ⓘ capping layer ⓘ multilayer reflective stack ⓘ |
| hasMaterial |
molybdenum
ⓘ
silicon ⓘ tantalum boron nitride absorber ⓘ tantalum nitride absorber ⓘ tantalum-based absorber ⓘ |
| hasSubstrateMaterial |
ULE glass
ⓘ
fused silica (for some early designs) ⓘ ultra-low thermal expansion glass ⓘ |
| hasType | reflective photomask ⓘ |
| inspectedBy |
actinic EUV inspection tools
ⓘ
electron-beam inspection tools ⓘ |
| manufacturedBy | specialized mask shops ⓘ |
| operatesAtWavelength | 13.5 nm ⓘ |
| relatedTo |
EUV mask blank
NERFINISHED
ⓘ
EUV pellicle NERFINISHED ⓘ EUV scanner ⓘ |
| requires |
actinic inspection
ⓘ
cleanroom handling ⓘ mask blank defect control ⓘ nanometer-scale patterning of absorber layer ⓘ precision multilayer deposition ⓘ vacuum-compatible materials ⓘ |
| standardizedBy | SEMI standards (partially) NERFINISHED ⓘ |
| usedBy |
integrated device manufacturers
ⓘ
semiconductor foundries ⓘ |
| usedFor |
patterning nanometer-scale features
ⓘ
patterning semiconductor wafers ⓘ |
| usedIn |
3 nm technology node
ⓘ
5 nm technology node ⓘ advanced DRAM manufacturing ⓘ extreme ultraviolet lithography ⓘ logic chip manufacturing ⓘ sub-10 nm technology nodes ⓘ |
Referenced by (1)
Full triples — surface form annotated when it differs from this entity's canonical label.