“Design of ion-implanted MOSFET’s with very small physical dimensions”
E809917
“Design of ion-implanted MOSFET’s with very small physical dimensions” is the seminal 1974 paper by Robert H. Dennard and colleagues that introduced the scaling theory for MOSFETs, forming the basis of Dennard scaling and decades of CMOS miniaturization.
All labels observed (1)
| Label | Occurrences |
|---|---|
| “Design of ion-implanted MOSFET’s with very small physical dimensions” canonical | 1 |
How this entity was disambiguated
This entity first appeared as the object of triple T9627445 — resolving that mention is where its identity was fixed. The disambiguator weighed these candidate entities and picked the highlighted one (or “None”, minting a new entity). This is how homonymy is resolved: the same surface form can point to different entities.
Target entity: “Design of ion-implanted MOSFET’s with very small physical dimensions” Context triple: [Dennard scaling, describedIn, “Design of ion-implanted MOSFET’s with very small physical dimensions”]
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A.
“Cramming more components onto integrated circuits”
“Cramming more components onto integrated circuits” is the landmark 1965 article by Gordon E. Moore that introduced the observation later known as Moore’s Law, predicting the exponential growth of transistor density on integrated circuits.
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B.
Lilienfeld field-effect transistor concept
The Lilienfeld field-effect transistor concept is an early theoretical design for a voltage-controlled semiconductor device that anticipated the modern field-effect transistor decades before it became practical.
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C.
IEEE International Electron Devices Meeting
The IEEE International Electron Devices Meeting is a premier annual conference where researchers and industry leaders present and discuss cutting-edge advances in semiconductor and electronic device technology.
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D.
MOSFETs
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
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E.
Mead–Conway VLSI design revolution
The Mead–Conway VLSI design revolution was a transformative shift in microchip design methodology that introduced simplified, scalable design rules and modular, high-level approaches, enabling widespread, university-level integrated circuit design and catalyzing the modern semiconductor industry.
- F. None of above. chosen
- G. Unsure - the case is ambiguous/there is not enough information to decide.
Target entity: “Design of ion-implanted MOSFET’s with very small physical dimensions” Target entity description: “Design of ion-implanted MOSFET’s with very small physical dimensions” is the seminal 1974 paper by Robert H. Dennard and colleagues that introduced the scaling theory for MOSFETs, forming the basis of Dennard scaling and decades of CMOS miniaturization.
-
A.
“Cramming more components onto integrated circuits”
“Cramming more components onto integrated circuits” is the landmark 1965 article by Gordon E. Moore that introduced the observation later known as Moore’s Law, predicting the exponential growth of transistor density on integrated circuits.
-
B.
Lilienfeld field-effect transistor concept
The Lilienfeld field-effect transistor concept is an early theoretical design for a voltage-controlled semiconductor device that anticipated the modern field-effect transistor decades before it became practical.
-
C.
IEEE International Electron Devices Meeting
The IEEE International Electron Devices Meeting is a premier annual conference where researchers and industry leaders present and discuss cutting-edge advances in semiconductor and electronic device technology.
-
D.
MOSFETs
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
-
E.
Mead–Conway VLSI design revolution
The Mead–Conway VLSI design revolution was a transformative shift in microchip design methodology that introduced simplified, scalable design rules and modular, high-level approaches, enabling widespread, university-level integrated circuit design and catalyzing the modern semiconductor industry.
- F. None of above. chosen
Statements (44)
| Predicate | Object |
|---|---|
| instanceOf |
scientific paper
ⓘ
seminal work in microelectronics ⓘ |
| affiliationOfAuthors | IBM Thomas J. Watson Research Center NERFINISHED ⓘ |
| author |
A. R. LeBlanc
NERFINISHED
ⓘ
E. Bassous NERFINISHED ⓘ F. H. Gaensslen NERFINISHED ⓘ H. Yu NERFINISHED ⓘ Robert H. Dennard NERFINISHED ⓘ V. L. Rideout NERFINISHED ⓘ |
| basisFor |
Dennard scaling law
NERFINISHED
ⓘ
classical CMOS constant-field scaling ⓘ |
| citedFor |
formalization of MOSFET constant-field scaling
ⓘ
origin of Dennard scaling concept ⓘ |
| contribution |
analyzed short-channel effects in scaled MOSFETs
ⓘ
demonstrated that power density can remain approximately constant under scaling ⓘ formulated constant-field scaling rules for MOSFETs ⓘ provided design guidelines for very small MOSFETs using ion implantation ⓘ related device performance to geometric and voltage scaling factors ⓘ showed how to scale MOSFET dimensions and voltages to maintain electric fields ⓘ |
| field |
integrated circuit design
ⓘ
microelectronics ⓘ semiconductor device physics ⓘ |
| hasImpactOn |
digital integrated circuits
ⓘ
microprocessor design ⓘ semiconductor manufacturing roadmaps ⓘ |
| influenced |
CMOS technology scaling for several decades
ⓘ
Moore’s law implementation in CMOS ⓘ VLSI design methodologies ⓘ |
| introducesConcept | Dennard scaling NERFINISHED ⓘ |
| keyIdea |
adjust doping using ion implantation to control short-channel behavior
ⓘ
predict improvements in speed and density with scaling ⓘ scale all linear dimensions by a factor k ⓘ scale voltages by the same factor k to keep electric fields constant ⓘ |
| language | English ⓘ |
| mainSubject |
CMOS miniaturization
ⓘ
MOSFET scaling theory ⓘ ion-implanted MOSFETs ⓘ |
| publicationYear | 1974 ⓘ |
| publishedIn | IEEE Journal of Solid-State Circuits NERFINISHED ⓘ |
| recognizedAs | foundational paper for CMOS scaling theory ⓘ |
| topic |
electric field distribution in scaled devices
ⓘ
power dissipation in scaled MOSFETs ⓘ short-channel MOSFET design ⓘ threshold voltage control via ion implantation ⓘ |
How these facts were elicited
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You are a knowledge base construction expert. Given a subject entity and a description of it, return factual statements that you know for the subject as a JSON list of dictionaries(triples), where keys must be "subject", "predicate" and "object". The number of facts may be very high, between 25 to 50 or more, for very popular subjects. For less popular subjects, the number of facts can be very low, like 5 or 10. # Requirements - If you don't know the subject at all, return an empty list. - If the subject is not a named entity, return an empty list. - Include at least one triple where predicate is "instanceOf". - Do not get too wordy. - Separate several objects into multiple triples with one object.
Subject: “Design of ion-implanted MOSFET’s with very small physical dimensions” Description of subject: “Design of ion-implanted MOSFET’s with very small physical dimensions” is the seminal 1974 paper by Robert H. Dennard and colleagues that introduced the scaling theory for MOSFETs, forming the basis of Dennard scaling and decades of CMOS miniaturization.
Referenced by (1)
Full triples — surface form annotated when it differs from this entity's canonical label.