“Design of ion-implanted MOSFET’s with very small physical dimensions”

E809917

“Design of ion-implanted MOSFET’s with very small physical dimensions” is the seminal 1974 paper by Robert H. Dennard and colleagues that introduced the scaling theory for MOSFETs, forming the basis of Dennard scaling and decades of CMOS miniaturization.

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Predicate Object
instanceOf scientific paper
seminal work in microelectronics
affiliationOfAuthors IBM Thomas J. Watson Research Center NERFINISHED
author A. R. LeBlanc NERFINISHED
E. Bassous NERFINISHED
F. H. Gaensslen NERFINISHED
H. Yu NERFINISHED
Robert H. Dennard NERFINISHED
V. L. Rideout NERFINISHED
basisFor Dennard scaling law NERFINISHED
classical CMOS constant-field scaling
citedFor formalization of MOSFET constant-field scaling
origin of Dennard scaling concept
contribution analyzed short-channel effects in scaled MOSFETs
demonstrated that power density can remain approximately constant under scaling
formulated constant-field scaling rules for MOSFETs
provided design guidelines for very small MOSFETs using ion implantation
related device performance to geometric and voltage scaling factors
showed how to scale MOSFET dimensions and voltages to maintain electric fields
field integrated circuit design
microelectronics
semiconductor device physics
hasImpactOn digital integrated circuits
microprocessor design
semiconductor manufacturing roadmaps
influenced CMOS technology scaling for several decades
Moore’s law implementation in CMOS
VLSI design methodologies
introducesConcept Dennard scaling NERFINISHED
keyIdea adjust doping using ion implantation to control short-channel behavior
predict improvements in speed and density with scaling
scale all linear dimensions by a factor k
scale voltages by the same factor k to keep electric fields constant
language English
mainSubject CMOS miniaturization
MOSFET scaling theory
ion-implanted MOSFETs
publicationYear 1974
publishedIn IEEE Journal of Solid-State Circuits NERFINISHED
recognizedAs foundational paper for CMOS scaling theory
topic electric field distribution in scaled devices
power dissipation in scaled MOSFETs
short-channel MOSFET design
threshold voltage control via ion implantation

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Dennard scaling describedIn “Design of ion-implanted MOSFET’s with very small physical dimensions”