Gunn effect
E708821
The Gunn effect is an electronic phenomenon in certain semiconductors where negative differential resistance leads to high-frequency oscillations and microwave generation under strong electric fields.
Statements (46)
| Predicate | Object |
|---|---|
| instanceOf |
electronic phenomenon
ⓘ
transport phenomenon in semiconductors ⓘ |
| belongsToField |
semiconductor device physics
ⓘ
solid-state physics ⓘ |
| causes |
formation of high-field domains
ⓘ
propagating charge domains ⓘ |
| hasApplication |
electronic oscillators for communication systems
ⓘ
frequency generation without resonant circuits ⓘ laboratory microwave instrumentation ⓘ solid-state microwave sources ⓘ |
| hasConsequence |
domain transit-time oscillations
ⓘ
spatially inhomogeneous electric field distribution ⓘ |
| hasDiscoverer | J. B. Gunn NERFINISHED ⓘ |
| hasDiscoveryYear | 1963 ⓘ |
| hasFrequencyRange | microwave frequencies ⓘ |
| hasKeyParameter |
electron drift velocity-field characteristic
ⓘ
threshold electric field ⓘ |
| hasTypicalFrequencyRange | from a few GHz to tens of GHz ⓘ |
| isBasedOn |
intervalley electron transfer
ⓘ
transfer of electrons to higher-energy satellite valleys ⓘ |
| isDifferentFrom |
avalanche breakdown
ⓘ
tunnel diode negative resistance ⓘ |
| isExplainedBy | negative slope region of velocity–field curve ⓘ |
| isModeledBy | Ridley–Watkins–Hilsum theory NERFINISHED ⓘ |
| isNamedAfter | J. B. Gunn NERFINISHED ⓘ |
| isObservedUnder |
constant voltage bias
ⓘ
proper sample length and contact configuration ⓘ |
| isUtilizedIn |
Gunn diodes
NERFINISHED
ⓘ
local oscillators in receivers ⓘ microwave oscillators ⓘ microwave signal generators ⓘ radar speed guns ⓘ |
| leadsTo |
current oscillations
ⓘ
voltage oscillations ⓘ |
| occursIn |
certain compound semiconductors
ⓘ
gallium arsenide (GaAs) NERFINISHED ⓘ indium phosphide (InP) ⓘ other III-V semiconductors ⓘ |
| occursInDeviceRegion | bulk of the semiconductor ⓘ |
| requiresBias | dc bias above threshold field ⓘ |
| requiresCondition | strong electric field ⓘ |
| requiresMaterialProperty |
multi-valley conduction band
ⓘ
suitable intervalley energy separation ⓘ |
| requiresProperty | negative differential resistance ⓘ |
| resultsIn |
high-frequency oscillations
ⓘ
microwave generation ⓘ |
Referenced by (1)
Full triples — surface form annotated when it differs from this entity's canonical label.