Kikuchi lines in electron diffraction
E579522
Kikuchi lines in electron diffraction are characteristic pairs of diffuse, intersecting bands in electron diffraction patterns that arise from inelastic and subsequent coherent scattering in crystals, and are widely used for precise crystallographic orientation analysis.
Statements (49)
| Predicate | Object |
|---|---|
| instanceOf |
crystallographic analysis tool
ⓘ
electron diffraction phenomenon ⓘ |
| alsoKnownAs | Kikuchi patterns NERFINISHED ⓘ |
| appliedIn |
grain boundary character analysis
ⓘ
orientation imaging microscopy ⓘ phase identification in multiphase materials ⓘ |
| arisesFrom |
inelastic scattering of electrons
ⓘ
subsequent coherent Bragg scattering ⓘ |
| bandPositionDeterminedBy | Bragg angle for the diffracting planes ⓘ |
| bandWidthProportionalTo | inelastic scattering angle distribution ⓘ |
| characterizedBy |
pairs of diffuse bands
ⓘ
sharp line intersections at zone axes ⓘ |
| contrastsWith | sharp Bragg diffraction spots ⓘ |
| dependsOn |
accelerating voltage
ⓘ
atomic number of the specimen ⓘ crystal orientation ⓘ crystal symmetry ⓘ specimen thickness ⓘ |
| discoveredBy | Seishi Kikuchi NERFINISHED ⓘ |
| discoveryYear | 1928 ⓘ |
| enables |
calibration of camera length in TEM
ⓘ
high-precision orientation mapping ⓘ |
| geometryDescribedBy | Kikuchi cone construction NERFINISHED ⓘ |
| hasCause | diffuse inelastic background plus Bragg diffraction ⓘ |
| hasPart |
Kikuchi bands
NERFINISHED
ⓘ
Kikuchi line intersections ⓘ |
| intersectionsCorrespondTo | zone axes ⓘ |
| namedAfter | Seishi Kikuchi NERFINISHED ⓘ |
| occursIn |
electron backscatter diffraction
ⓘ
reflection high-energy electron diffraction ⓘ transmission electron diffraction ⓘ |
| relatedTo |
Bragg reflection cones
ⓘ
Ewald sphere construction NERFINISHED ⓘ |
| requires |
crystalline specimen
ⓘ
high-energy electrons ⓘ partially coherent electron beam ⓘ sufficient inelastic scattering to form diffuse background ⓘ |
| sensitiveTo | small misorientations ⓘ |
| typicalElectronEnergyRange | 10 keV to 300 keV ⓘ |
| usedFor |
crystallographic orientation determination
ⓘ
indexing of diffraction patterns ⓘ lattice parameter refinement ⓘ space group analysis ⓘ texture analysis in polycrystals ⓘ |
| usedIn |
RHEED surface studies
ⓘ
scanning electron microscopy with EBSD ⓘ transmission electron microscopy ⓘ |
| visualizedOn |
fluorescent screen in TEM
ⓘ
recorded diffraction film or detector ⓘ |
Referenced by (1)
Full triples — surface form annotated when it differs from this entity's canonical label.