Shockley diode equation
E53320
The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
Statements (50)
| Predicate | Object |
|---|---|
| instanceOf |
current–voltage relationship model
→
diode equation → semiconductor physics formula → |
| appliesTo |
forward-biased diode
→
ideal p–n junction diode → reverse-biased diode (before breakdown) → |
| approximation |
I ≈ I_s e^{V/(n V_T)} for forward bias where V ≫ n V_T
→
|
| assumes |
abrupt p–n junction
→
low-level injection → negligible recombination in depletion region → negligible series resistance → steady-state conditions → temperature uniformity → uniform doping → |
| category |
nonlinear device equation
→
|
| defines |
diode current I as a function of applied voltage V
→
|
| dependsOn |
absolute temperature T through V_T
→
material properties through I_s → |
| describes |
current–voltage characteristic of an ideal p–n junction diode
→
|
| field |
electronics
→
semiconductor device physics → |
| hasComponentConcept |
Boltzmann constant k
→
elementary charge q → thermal voltage V_T = kT/q → |
| hasMathematicalForm |
I = I_s (e^{V/(n V_T)} - 1)
→
|
| hasSymbol |
I
→
I_s → V → V_T → n → |
| hasTypicalRange |
ideality factor n between 1 and 2
→
|
| namedAfter |
William Bradford Shockley
→
|
| parameter |
ideality factor n
→
saturation current I_s → thermal voltage V_T → |
| relatedTo |
diffusion current
→
drift current → p–n junction theory → |
| relates |
diode current
→
diode voltage → |
| shows |
exponential increase of current with forward voltage
→
|
| usedIn |
SPICE diode models (as a core relation)
→
analysis of LEDs → analysis of photodiodes → analysis of solar cells → circuit simulation → design of clippers and clampers → design of rectifiers → semiconductor device modeling → |
| validWhen |
diode is not in breakdown region
→
|
Referenced by (1)
| Subject (surface form when different) | Predicate |
|---|---|
|
William Shockley
→
|
knownFor |