Shockley diode equation
E53320
The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
All labels observed (1)
| Label | Occurrences |
|---|---|
| Shockley diode equation canonical | 1 |
How this entity was disambiguated
This entity first appeared as the object of triple T420691 — resolving that mention is where its identity was fixed. The disambiguator weighed these candidate entities and picked the highlighted one (or “None”, minting a new entity). This is how homonymy is resolved: the same surface form can point to different entities.
Target entity: Shockley diode equation Context triple: [William Shockley, knownFor, Shockley diode equation]
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A.
Shockley Semiconductor Laboratory
Shockley Semiconductor Laboratory was a pioneering Silicon Valley research and development company founded by Nobel laureate William Shockley that became the seed for many later semiconductor firms, including those started by the "traitorous eight."
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B.
Fleming valve
The Fleming valve is an early thermionic vacuum tube diode invented by John Ambrose Fleming that enabled the rectification and detection of radio signals, laying groundwork for modern electronics.
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C.
London equations
The London equations are fundamental relations in superconductivity that describe how magnetic fields behave inside superconductors, capturing key features like the Meissner effect and zero electrical resistance.
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D.
Einstein–Smoluchowski relation
The Einstein–Smoluchowski relation is a fundamental equation in statistical physics that links the diffusion coefficient of particles undergoing Brownian motion to their mobility and thermal energy.
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E.
Fairchild Semiconductor
Fairchild Semiconductor was a pioneering American semiconductor company that played a central role in the development of Silicon Valley and the modern integrated circuit industry.
- F. None of above. chosen
- G. Unsure - the case is ambiguous/there is not enough information to decide.
Target entity: Shockley diode equation Target entity description: The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
-
A.
Shockley Semiconductor Laboratory
Shockley Semiconductor Laboratory was a pioneering Silicon Valley research and development company founded by Nobel laureate William Shockley that became the seed for many later semiconductor firms, including those started by the "traitorous eight."
-
B.
Fleming valve
The Fleming valve is an early thermionic vacuum tube diode invented by John Ambrose Fleming that enabled the rectification and detection of radio signals, laying groundwork for modern electronics.
-
C.
London equations
The London equations are fundamental relations in superconductivity that describe how magnetic fields behave inside superconductors, capturing key features like the Meissner effect and zero electrical resistance.
-
D.
Einstein–Smoluchowski relation
The Einstein–Smoluchowski relation is a fundamental equation in statistical physics that links the diffusion coefficient of particles undergoing Brownian motion to their mobility and thermal energy.
-
E.
Fairchild Semiconductor
Fairchild Semiconductor was a pioneering American semiconductor company that played a central role in the development of Silicon Valley and the modern integrated circuit industry.
- F. None of above. chosen
Statements (50)
| Predicate | Object |
|---|---|
| instanceOf |
current–voltage relationship model
ⓘ
diode equation ⓘ semiconductor physics formula ⓘ |
| appliesTo |
forward-biased diode
ⓘ
ideal p–n junction diode ⓘ reverse-biased diode (before breakdown) ⓘ |
| approximation | I ≈ I_s e^{V/(n V_T)} for forward bias where V ≫ n V_T ⓘ |
| assumes |
abrupt p–n junction
ⓘ
low-level injection ⓘ negligible recombination in depletion region ⓘ negligible series resistance ⓘ steady-state conditions ⓘ temperature uniformity ⓘ uniform doping ⓘ |
| category | nonlinear device equation ⓘ |
| defines | diode current I as a function of applied voltage V ⓘ |
| dependsOn |
absolute temperature T through V_T
ⓘ
material properties through I_s ⓘ |
| describes | current–voltage characteristic of an ideal p–n junction diode ⓘ |
| field |
electronics
ⓘ
semiconductor device physics ⓘ |
| hasComponentConcept |
Boltzmann constant
ⓘ
surface form:
Boltzmann constant k
elementary charge q ⓘ thermal voltage V_T = kT/q ⓘ |
| hasMathematicalForm | I = I_s (e^{V/(n V_T)} - 1) ⓘ |
| hasSymbol |
I
ⓘ
I_s ⓘ V ⓘ V_T ⓘ n ⓘ |
| hasTypicalRange | ideality factor n between 1 and 2 ⓘ |
| namedAfter |
William Shockley
ⓘ
surface form:
William Bradford Shockley
|
| parameter |
ideality factor n
ⓘ
saturation current I_s ⓘ thermal voltage V_T ⓘ |
| relatedTo |
diffusion current
ⓘ
drift current ⓘ p–n junction theory ⓘ |
| relates |
diode current
ⓘ
diode voltage ⓘ |
| shows | exponential increase of current with forward voltage ⓘ |
| usedIn |
SPICE diode models (as a core relation)
ⓘ
analysis of LEDs ⓘ analysis of photodiodes ⓘ analysis of solar cells ⓘ circuit simulation ⓘ design of clippers and clampers ⓘ design of rectifiers ⓘ semiconductor device modeling ⓘ |
| validWhen | diode is not in breakdown region ⓘ |
How these facts were elicited
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You are a knowledge base construction expert. Given a subject entity and a description of it, return factual statements that you know for the subject as a JSON list of dictionaries(triples), where keys must be "subject", "predicate" and "object". The number of facts may be very high, between 25 to 50 or more, for very popular subjects. For less popular subjects, the number of facts can be very low, like 5 or 10. # Requirements - If you don't know the subject at all, return an empty list. - If the subject is not a named entity, return an empty list. - Include at least one triple where predicate is "instanceOf". - Do not get too wordy. - Separate several objects into multiple triples with one object.
Subject: Shockley diode equation Description of subject: The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
Referenced by (1)
Full triples — surface form annotated when it differs from this entity's canonical label.