3D NAND

E45909

NAND flash memory flash memory non-volatile memory technology

3D NAND is a type of flash memory in which memory cells are stacked vertically in multiple layers to achieve higher storage density, lower cost per bit, and improved performance compared to traditional planar NAND.

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All labels observed (3)

Label	Occurrences
3D NAND canonical	2
V-NAND	2
NAND flash	1

Statements (50)

Predicate	Object
instanceOf	NAND flash memory ⓘ flash memory ⓘ non-volatile memory technology ⓘ
alsoKnownAs	3D NAND ⓘ surface form: V-NAND vertical NAND ⓘ
canUseCellType	MLC (multi-level cell) ⓘ QLC (quad-level cell) ⓘ SLC (single-level cell) ⓘ TLC (triple-level cell) ⓘ
commercializationBegan	early 2010s ⓘ
comparedTo	planar NAND flash ⓘ
developedBy	Intel Corporation ⓘ surface form: Intel Micron Technology ⓘ SK hynix ⓘ Samsung ⓘ surface form: Samsung Electronics Toshiba ⓘ surface form: Toshiba (now Kioxia) Western Digital ⓘ
enables	high-capacity enterprise SSDs ⓘ multi-terabyte consumer SSDs ⓘ
fabricatedUsing	advanced lithography and etching techniques ⓘ
firstMassProductionBy	Samsung ⓘ surface form: Samsung Electronics
firstMassProductionProductName	3D NAND self-linksurface differs ⓘ surface form: V-NAND
hasAdvantageOverPlanarNAND	better cost efficiency for large capacities ⓘ better performance for many workloads ⓘ higher capacity per die ⓘ improved endurance for some implementations ⓘ
hasDisadvantage	higher initial capital cost for fabrication ⓘ more complex manufacturing process ⓘ
hasKeyFeature	better bit cost scaling at advanced process nodes ⓘ higher storage density than planar NAND ⓘ improved scalability compared to planar NAND ⓘ larger effective cell size in vertical dimension ⓘ lower cost per bit than planar NAND ⓘ multiple memory layers ⓘ reduced cell-to-cell interference compared to planar NAND ⓘ vertically stacked memory cells ⓘ
nonVolatile	true ⓘ
organizedInto	blocks and pages ⓘ
requiresProcessStep	high-aspect-ratio etching of vertical channels ⓘ
retainsDataWithoutPower	true ⓘ
storesDataAs	charge levels in floating gate or charge-trap structures ⓘ
supports	high layer counts (e.g., over 100 layers in modern products) ⓘ
usedIn	USB flash drives ⓘ embedded storage (eMMC, UFS) ⓘ enterprise storage systems ⓘ memory cards ⓘ solid-state drives (SSDs) ⓘ
usesStructure	charge-trap flash cells ⓘ stacked wordline layers ⓘ vertical channel structure ⓘ

Referenced by (5)

Full triples — surface form annotated when it differs from this entity's canonical label.

Western Digital → technology → 3D NAND ⓘ

SanDisk → technology → 3D NAND ⓘ

this entity surface form: NAND flash

3D NAND → firstMassProductionProductName → 3D NAND self-linksurface differs ⓘ

this entity surface form: V-NAND

3D NAND → alsoKnownAs → 3D NAND ⓘ

this entity surface form: V-NAND

Micron Technology → R&DFocus → 3D NAND ⓘ