3D NAND
E45909
3D NAND is a type of flash memory in which memory cells are stacked vertically in multiple layers to achieve higher storage density, lower cost per bit, and improved performance compared to traditional planar NAND.
Aliases (2)
- V-NAND ×2
- NAND flash ×1
Statements (50)
| Predicate | Object |
|---|---|
| instanceOf |
NAND flash memory
→
flash memory → non-volatile memory technology → |
| alsoKnownAs |
V-NAND
→
vertical NAND → |
| canUseCellType |
MLC (multi-level cell)
→
QLC (quad-level cell) → SLC (single-level cell) → TLC (triple-level cell) → |
| commercializationBegan |
early 2010s
→
|
| comparedTo |
planar NAND flash
→
|
| developedBy |
Intel
→
Micron Technology → SK hynix → Samsung Electronics → Toshiba (now Kioxia) → Western Digital → |
| enables |
high-capacity enterprise SSDs
→
multi-terabyte consumer SSDs → |
| fabricatedUsing |
advanced lithography and etching techniques
→
|
| firstMassProductionBy |
Samsung Electronics
→
|
| firstMassProductionProductName |
V-NAND
→
|
| hasAdvantageOverPlanarNAND |
better cost efficiency for large capacities
→
better performance for many workloads → higher capacity per die → improved endurance for some implementations → |
| hasDisadvantage |
higher initial capital cost for fabrication
→
more complex manufacturing process → |
| hasKeyFeature |
better bit cost scaling at advanced process nodes
→
higher storage density than planar NAND → improved scalability compared to planar NAND → larger effective cell size in vertical dimension → lower cost per bit than planar NAND → multiple memory layers → reduced cell-to-cell interference compared to planar NAND → vertically stacked memory cells → |
| nonVolatile |
true
→
|
| organizedInto |
blocks and pages
→
|
| requiresProcessStep |
high-aspect-ratio etching of vertical channels
→
|
| retainsDataWithoutPower |
true
→
|
| storesDataAs |
charge levels in floating gate or charge-trap structures
→
|
| supports |
high layer counts (e.g., over 100 layers in modern products)
→
|
| usedIn |
USB flash drives
→
embedded storage (eMMC, UFS) → enterprise storage systems → memory cards → solid-state drives (SSDs) → |
| usesStructure |
charge-trap flash cells
→
stacked wordline layers → vertical channel structure → |
Referenced by (4)
| Subject (surface form when different) | Predicate |
|---|---|
|
SanDisk
("NAND flash")
→
Western Digital → |
technology |
|
3D NAND
("V-NAND")
→
|
alsoKnownAs |
|
3D NAND
("V-NAND")
→
|
firstMassProductionProductName |