TLC (triple-level cell)
E232179
TLC (triple-level cell) is a type of NAND flash memory that stores three bits of data per cell, offering higher storage density at lower cost but typically with reduced endurance and performance compared to single- and multi-level cell technologies.
All labels observed (1)
| Label | Occurrences |
|---|---|
| TLC (triple-level cell) canonical | 1 |
Statements (44)
| Predicate | Object |
|---|---|
| instanceOf |
NAND flash memory technology
ⓘ
non-volatile memory cell type ⓘ |
| abbreviation | TLC ⓘ |
| benefit |
increased storage capacity per die
ⓘ
reduced cost per unit of storage ⓘ |
| cellLevels | 8 ⓘ |
| cellLevelsExplanation | TLC uses eight distinct charge levels to encode three bits per cell ⓘ |
| commonIn | mass-market consumer storage devices ⓘ |
| comparedTo |
MLC (multi-level cell)
ⓘ
SLC (single-level cell) ⓘ |
| dataRetention | typically lower than SLC and MLC at same conditions ⓘ |
| fullName | triple-level cell ⓘ |
| hasHigherStorageDensityThan |
MLC (multi-level cell)
ⓘ
SLC (single-level cell) ⓘ |
| hasLowerCostPerBitThan |
MLC (multi-level cell)
ⓘ
SLC (single-level cell) ⓘ |
| hasLowerEnduranceThan |
MLC (multi-level cell)
ⓘ
SLC (single-level cell) ⓘ |
| hasLowerPerformanceThan |
MLC (multi-level cell)
ⓘ
SLC (single-level cell) ⓘ |
| lessCommonIn | high-end enterprise SSDs ⓘ |
| limitation |
greater sensitivity to cell-to-cell interference
ⓘ
greater sensitivity to charge leakage over time ⓘ reduced program/erase cycle endurance ⓘ |
| notableProperty |
higher bit error rate than SLC and MLC at similar process nodes
ⓘ
requires more precise charge level sensing than SLC and MLC ⓘ typically relies heavily on error correction codes ⓘ typically uses wear-leveling algorithms to extend lifespan ⓘ |
| programOperation | requires multiple program-and-verify steps per cell ⓘ |
| readLatency | typically higher than SLC and MLC ⓘ |
| requires |
advanced flash controller algorithms
ⓘ
strong error correction coding (ECC) ⓘ |
| storesBitsPerCell |
3
ⓘ
three bits ⓘ |
| technologyGeneration | later generation than SLC and early MLC ⓘ |
| tradeOff |
higher capacity versus lower endurance
ⓘ
lower cost per gigabyte versus reduced write performance ⓘ |
| typicalUseCase |
USB flash drives
ⓘ
consumer solid-state drives ⓘ mainstream client SSDs ⓘ memory cards ⓘ |
| usedIn |
3D NAND flash
ⓘ
planar NAND flash ⓘ |
| writeLatency | typically higher than SLC and MLC ⓘ |
Referenced by (1)
Full triples — surface form annotated when it differs from this entity's canonical label.