Triple
T8021368
| Position | Surface form | Disambiguated ID | Type / Status |
|---|---|---|---|
| Subject | Esaki diode |
E186747
|
entity |
| Predicate | relatedTo |
P37
|
FINISHED |
| Object |
resonant tunneling diode
A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.
|
E708817
|
NE FINISHED |
How this triple was built (4 steps)
Every LLM step that produced this triple, in pipeline order — named-entity classification, the disambiguation choices (the exact options shown, with the pick highlighted), and the generated description. The batch + timestamp of each is in the Provenance table below.
NER
Named-entity recognition
gpt-5-mini
Instruction
Given a phrase, classify it is english named entity (e.g., persons, organizations, works of art) in Latin script, or not (e.g., literals, dates, URLs, verbose phrases). For disambiguation, the statement where the phrase occurs as object is also given. Please return a JSON object with `phrase` (string, the phrase being analyzed) and `is_ne` (boolean, indicating whether the phrase is a Named Entity).
Input
Phrase: resonant tunneling diode | Statement: [Esaki diode, relatedTo, resonant tunneling diode]
NED1
Entity disambiguation (via context triple)
gpt-5-mini-2025-08-07
Target entity: resonant tunneling diode Context triple: [Esaki diode, relatedTo, resonant tunneling diode]
-
A.
Esaki diode
The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
-
B.
surface-barrier transistor
The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
-
C.
gallium arsenide
Gallium arsenide is a compound semiconductor material known for its high electron mobility and direct bandgap, widely used in high-frequency and optoelectronic devices such as microwave integrated circuits, LEDs, and laser diodes.
-
D.
Shockley diode equation
The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
-
E.
Giaever tunneling
Giaever tunneling is a quantum mechanical electron tunneling phenomenon in superconductors that provided key experimental confirmation of BCS theory and earned Ivar Giaever a share of the 1973 Nobel Prize in Physics.
- F. None of above. chosen
- G. Unsure - the case is ambiguous/there is not enough information to decide.
NEDg
Description generation
gpt-5.1
Instruction
Generate a one-sentence description of the target entity. You are given a context triple in the form (subject, predicate, object), where the object is the target entity. # Instructions Use the triple to infer relevant information about the entity. Describe the entity based on what is most defining, well-known. Avoid repeating the information from the triple, unless really essential. # Response Format Return only the sentence: "Description: [one-sentence description of the target entity]"
Input
Entity: resonant tunneling diode Triple: [Esaki diode, relatedTo, resonant tunneling diode]
Generated description
A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.
NED2
Entity disambiguation (via description)
gpt-5-mini-2025-08-07
Target entity: resonant tunneling diode Target entity description: A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.
-
A.
Esaki diode
The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
-
B.
surface-barrier transistor
The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
-
C.
gallium arsenide
Gallium arsenide is a compound semiconductor material known for its high electron mobility and direct bandgap, widely used in high-frequency and optoelectronic devices such as microwave integrated circuits, LEDs, and laser diodes.
-
D.
Shockley diode equation
The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
-
E.
Giaever tunneling
Giaever tunneling is a quantum mechanical electron tunneling phenomenon in superconductors that provided key experimental confirmation of BCS theory and earned Ivar Giaever a share of the 1973 Nobel Prize in Physics.
- F. None of above. chosen
Provenance (5 batches)
The batch behind each pipeline step, in order, with when it ran. Timestamps are batch-level — stages were processed in waves, so the object chain (NER → NED1 → NEDg → NED2) reads in order, but predicate / elicitation batches can sit in a different wave.
| Step | Stage | Batch ID | Status | When |
|---|---|---|---|---|
| creating | Elicitation | batch_69ca82ac7fc081909b1398cf025423af |
completed | March 30, 2026, 2:03 p.m. |
| NER | Named-entity recognition | batch_69cb3e8d90488190b57d1e748e272061 |
completed | March 31, 2026, 3:25 a.m. |
| NED1 | Entity disambiguation (via context triple) | batch_69cc56c82824819082e93eddc40bfad1 |
completed | March 31, 2026, 11:20 p.m. |
| NEDg | Description generation | batch_69cc5ca6efbc819082f4c643446da354 |
completed | March 31, 2026, 11:45 p.m. |
| NED2 | Entity disambiguation (via description) | batch_69cc5d6d93f08190b17d6c7a4fad2cf0 |
completed | March 31, 2026, 11:49 p.m. |
Created at: March 30, 2026, 5:20 p.m.