Triple

T8021368
Position Surface form Disambiguated ID Type / Status
Subject Esaki diode E186747 entity
Predicate relatedTo P37 FINISHED
Object resonant tunneling diode
A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.
E708817 NE FINISHED

How this triple was built (4 steps)

Every LLM step that produced this triple, in pipeline order — named-entity classification, the disambiguation choices (the exact options shown, with the pick highlighted), and the generated description. The batch + timestamp of each is in the Provenance table below.

NER Named-entity recognition gpt-5-mini
Instruction
Given a phrase, classify it is english named entity (e.g., persons, organizations, works of art) in Latin script, or not (e.g., literals, dates, URLs, verbose phrases). For disambiguation, the statement where the phrase occurs as object is also given. Please return a JSON object with `phrase` (string, the phrase being analyzed) and `is_ne` (boolean, indicating whether the phrase is a Named Entity).
Input
Phrase: resonant tunneling diode | Statement: [Esaki diode, relatedTo, resonant tunneling diode]
NED1 Entity disambiguation (via context triple) gpt-5-mini-2025-08-07
Target entity: resonant tunneling diode
Context triple: [Esaki diode, relatedTo, resonant tunneling diode]
  • A. Esaki diode
    The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
  • B. surface-barrier transistor
    The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
  • C. gallium arsenide
    Gallium arsenide is a compound semiconductor material known for its high electron mobility and direct bandgap, widely used in high-frequency and optoelectronic devices such as microwave integrated circuits, LEDs, and laser diodes.
  • D. Shockley diode equation
    The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
  • E. Giaever tunneling
    Giaever tunneling is a quantum mechanical electron tunneling phenomenon in superconductors that provided key experimental confirmation of BCS theory and earned Ivar Giaever a share of the 1973 Nobel Prize in Physics.
  • F. None of above. chosen
  • G. Unsure - the case is ambiguous/there is not enough information to decide.
NEDg Description generation gpt-5.1
Instruction
Generate a one-sentence description of the target entity. 
You are given a context triple in the form (subject, predicate, object), where the object is the target entity. 
# Instructions
Use the triple to infer relevant information about the entity. Describe the entity based on what is most defining, well-known. 
Avoid repeating the information from the triple, unless really essential.
# Response Format
Return only the sentence: "Description: [one-sentence description of the target entity]"
Input
Entity: resonant tunneling diode
Triple: [Esaki diode, relatedTo, resonant tunneling diode]
Generated description
A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.
NED2 Entity disambiguation (via description) gpt-5-mini-2025-08-07
Target entity: resonant tunneling diode
Target entity description: A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.
  • A. Esaki diode
    The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
  • B. surface-barrier transistor
    The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
  • C. gallium arsenide
    Gallium arsenide is a compound semiconductor material known for its high electron mobility and direct bandgap, widely used in high-frequency and optoelectronic devices such as microwave integrated circuits, LEDs, and laser diodes.
  • D. Shockley diode equation
    The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
  • E. Giaever tunneling
    Giaever tunneling is a quantum mechanical electron tunneling phenomenon in superconductors that provided key experimental confirmation of BCS theory and earned Ivar Giaever a share of the 1973 Nobel Prize in Physics.
  • F. None of above. chosen

Provenance (5 batches)

The batch behind each pipeline step, in order, with when it ran. Timestamps are batch-level — stages were processed in waves, so the object chain (NER → NED1 → NEDg → NED2) reads in order, but predicate / elicitation batches can sit in a different wave.

Step Stage Batch ID Status When
creating Elicitation batch_69ca82ac7fc081909b1398cf025423af completed March 30, 2026, 2:03 p.m.
NER Named-entity recognition batch_69cb3e8d90488190b57d1e748e272061 completed March 31, 2026, 3:25 a.m.
NED1 Entity disambiguation (via context triple) batch_69cc56c82824819082e93eddc40bfad1 completed March 31, 2026, 11:20 p.m.
NEDg Description generation batch_69cc5ca6efbc819082f4c643446da354 completed March 31, 2026, 11:45 p.m.
NED2 Entity disambiguation (via description) batch_69cc5d6d93f08190b17d6c7a4fad2cf0 completed March 31, 2026, 11:49 p.m.
Created at: March 30, 2026, 5:20 p.m.