resonant tunneling diode

E708817

A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.

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Predicate Object
instanceOf quantum-effect semiconductor device
tunneling diode
basedOn quantum mechanical tunneling
belongsTo nanoelectronic devices
quantum transport devices
contains quantum well
two potential barriers
enables ultra-fast switching
exhibits negative differential resistance
exploits resonant tunneling
hasI-VCharacteristic N-shaped
hasKeyParameter barrier thickness
doping concentration
peak-to-valley current ratio
resonant energy level spacing
well width
hasProperty bistability
high peak current density
hysteresis in I-V curve
room-temperature operation capability
very short switching time
hasRegion collector
emitter
quantum well region
implementedIn GaAs/AlGaAs heterostructures
III-V compound semiconductors
InGaAs/AlAs heterostructures
isCharacterizedBy double-barrier heterostructure
isUsedFor compact microwave sources
monostable-bistable transition logic elements
nonlinear circuit elements
submillimeter-wave oscillators
ultra-high-speed analog-to-digital conversion
operatesBy alignment of quantized energy levels with Fermi level
operatesThrough double potential barriers
requires epitaxial growth techniques
precise layer thickness control
showsEffect current peak at resonance
current valley after resonance
usedIn frequency multipliers
high-frequency circuits
high-speed digital circuits
high-speed oscillators
low-power logic circuits
microwave circuits
multi-valued logic circuits
terahertz devices
wasIntensivelyStudiedIn 1980s

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Esaki diode relatedTo resonant tunneling diode