Robert H. Dennard

E811378

Robert H. Dennard is an American electrical engineer and inventor best known for creating dynamic random-access memory (DRAM) and formulating the principle of transistor density and power scaling in integrated circuits.

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Label Occurrences
Robert H. Dennard canonical 2

Statements (46)

Predicate Object
instanceOf electrical engineer
awardReceived Harvey Prize NERFINISHED
IEEE Edison Medal NERFINISHED
IEEE Medal of Honor NERFINISHED
Kyoto Prize in Advanced Technology NERFINISHED
National Academy of Engineering membership NERFINISHED
National Medal of Technology and Innovation NERFINISHED
birthName Robert Dennard NERFINISHED
birthPlace Terrell, Texas, United States NERFINISHED
countryOfCitizenship United States of America
educatedAt Carnegie Institute of Technology NERFINISHED
Carnegie Mellon University NERFINISHED
Southern Methodist University NERFINISHED
employer IBM NERFINISHED
familyName Dennard NERFINISHED
fieldOfWork computer memory
electrical engineering
integrated circuits
microelectronics
givenName Robert
influenced Moore's law scaling of transistors
microprocessor design
semiconductor memory industry
inventionDate 1967
knownFor DRAM NERFINISHED
Dennard scaling NERFINISHED
dynamic random-access memory
power scaling in integrated circuits
transistor density scaling
languageSpoken English
memberOf IBM Academy of Technology NERFINISHED
National Academy of Engineering
name Robert H. Dennard NERFINISHED
nationality American
notableConcept Dennard scaling NERFINISHED
notableInvention dynamic random-access memory cell
one-transistor DRAM cell NERFINISHED
notableWork invention of DRAM
paper on field-effect transistor scaling
occupation engineer
inventor
researcher
patentOn DRAM NERFINISHED
one-transistor dynamic RAM cell
placeOfBirth Terrell, Texas, United States NERFINISHED
workLocation IBM Thomas J. Watson Research Center NERFINISHED

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