NMOS

E763300

NMOS is a type of semiconductor fabrication technology that uses n-channel metal–oxide–semiconductor field-effect transistors as the primary building blocks for integrated circuits.

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Statements (49)

Predicate Object
instanceOf MOS technology
semiconductor fabrication technology
advantage faster switching than PMOS for similar geometry
higher electron mobility than PMOS
canInclude n-channel depletion-mode MOSFET load devices
category n-channel device technology
channelType n-type
complementaryTechnology CMOS NERFINISHED
PMOS
conductionCarrierType electrons
controlMechanism electric field across gate oxide
disadvantage higher static power consumption than CMOS
lower noise margins than CMOS
static current in logic gates
dominantEra 1970s
1980s
fabricationIncludes gate electrode
gate oxide layer
source and drain n+ diffusion regions
fieldEffectType inversion-mode conduction under gate
fullName n-channel metal–oxide–semiconductor NERFINISHED
gateStructure metal–oxide–semiconductor
historicalPredecessorOf CMOS technology NERFINISHED
logicFamily NMOS logic
logicLevelConvention logic 0 represented by low voltage
logic 1 represented by high voltage
majorityCarrierType electrons
operatesBy forming an inversion layer of electrons in p-type substrate
powerSupplyRequirement single positive supply in many logic families
primaryBuildingBlock n-channel metal–oxide–semiconductor field-effect transistor GENERATED
relatedConcept CMOS NERFINISHED
MOSFET NERFINISHED
PMOS NERFINISHED
replacedBy CMOS in most modern digital ICs
requires positive gate voltage relative to source for conduction
switchingElement n-channel enhancement-mode MOSFET
thresholdVoltagePolarity positive
typicalApplication depletion-load logic
enhancement-load logic
typicalSubstrateType p-type silicon GENERATED
usedFor integrated circuits
usedIn address decoders
digital integrated circuits
early DRAM devices
early microcontrollers
memory chips
microprocessors
simple microprocessor datapaths
usesTransistorType n-channel MOSFET

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