NMOS
E763300
NMOS is a type of semiconductor fabrication technology that uses n-channel metal–oxide–semiconductor field-effect transistors as the primary building blocks for integrated circuits.
Statements (49)
| Predicate | Object |
|---|---|
| instanceOf |
MOS technology
ⓘ
semiconductor fabrication technology ⓘ |
| advantage |
faster switching than PMOS for similar geometry
ⓘ
higher electron mobility than PMOS ⓘ |
| canInclude | n-channel depletion-mode MOSFET load devices ⓘ |
| category | n-channel device technology ⓘ |
| channelType | n-type ⓘ |
| complementaryTechnology |
CMOS
NERFINISHED
ⓘ
PMOS ⓘ |
| conductionCarrierType | electrons ⓘ |
| controlMechanism | electric field across gate oxide ⓘ |
| disadvantage |
higher static power consumption than CMOS
ⓘ
lower noise margins than CMOS ⓘ static current in logic gates ⓘ |
| dominantEra |
1970s
ⓘ
1980s ⓘ |
| fabricationIncludes |
gate electrode
ⓘ
gate oxide layer ⓘ source and drain n+ diffusion regions ⓘ |
| fieldEffectType | inversion-mode conduction under gate ⓘ |
| fullName | n-channel metal–oxide–semiconductor NERFINISHED ⓘ |
| gateStructure | metal–oxide–semiconductor ⓘ |
| historicalPredecessorOf | CMOS technology NERFINISHED ⓘ |
| logicFamily | NMOS logic ⓘ |
| logicLevelConvention |
logic 0 represented by low voltage
ⓘ
logic 1 represented by high voltage ⓘ |
| majorityCarrierType | electrons ⓘ |
| operatesBy | forming an inversion layer of electrons in p-type substrate ⓘ |
| powerSupplyRequirement | single positive supply in many logic families ⓘ |
| primaryBuildingBlock | n-channel metal–oxide–semiconductor field-effect transistor GENERATED ⓘ |
| relatedConcept |
CMOS
NERFINISHED
ⓘ
MOSFET NERFINISHED ⓘ PMOS NERFINISHED ⓘ |
| replacedBy | CMOS in most modern digital ICs ⓘ |
| requires | positive gate voltage relative to source for conduction ⓘ |
| switchingElement | n-channel enhancement-mode MOSFET ⓘ |
| thresholdVoltagePolarity | positive ⓘ |
| typicalApplication |
depletion-load logic
ⓘ
enhancement-load logic ⓘ |
| typicalSubstrateType | p-type silicon GENERATED ⓘ |
| usedFor | integrated circuits ⓘ |
| usedIn |
address decoders
ⓘ
digital integrated circuits ⓘ early DRAM devices ⓘ early microcontrollers ⓘ memory chips ⓘ microprocessors ⓘ simple microprocessor datapaths ⓘ |
| usesTransistorType | n-channel MOSFET ⓘ |
Referenced by (4)
Full triples — surface form annotated when it differs from this entity's canonical label.