quantum cascade laser
E648274
A quantum cascade laser is a semiconductor laser that emits in the mid- to far-infrared range using engineered quantum wells to produce photons through intersubband electronic transitions.
Statements (48)
| Predicate | Object |
|---|---|
| instanceOf |
optoelectronic device
ⓘ
semiconductor laser ⓘ unipolar laser ⓘ |
| activeRegionStructure |
multiple quantum wells
ⓘ
superlattice heterostructure ⓘ |
| advantage |
broad wavelength tunability via design
ⓘ
high output power in mid-infrared ⓘ narrow linewidth emission ⓘ |
| application |
environmental monitoring
ⓘ
free-space optical communications ⓘ gas sensing ⓘ industrial process control ⓘ infrared countermeasures ⓘ infrared spectroscopy ⓘ medical diagnostics ⓘ terahertz imaging ⓘ |
| canOperate |
continuous-wave
ⓘ
pulsed ⓘ |
| carrierType | electrons only ⓘ |
| cavityType |
Fabry–Pérot
NERFINISHED
ⓘ
distributed feedback ⓘ |
| designPrinciple |
band-structure engineering
ⓘ
cascade of repeated gain stages ⓘ |
| distinguishedFrom | interband semiconductor laser ⓘ |
| emissionMechanism | intersubband electronic transitions ⓘ |
| emissionPolarization | transverse magnetic (TM) ⓘ |
| emissionType |
far-infrared radiation
ⓘ
mid-infrared radiation ⓘ |
| firstDemonstratedInYear | 1994 ⓘ |
| gainMedium | semiconductor quantum wells ⓘ |
| inventedAt | Bell Laboratories NERFINISHED ⓘ |
| inventedBy |
Federico Capasso
NERFINISHED
ⓘ
Jerome Faist NERFINISHED ⓘ |
| keyFeature |
each injected electron can generate multiple photons
ⓘ
tailorable emission wavelength via epitaxial growth ⓘ wavelength determined by layer thicknesses rather than bandgap ⓘ |
| operatingBand |
mid-infrared
ⓘ
terahertz ⓘ |
| pumpingMethod | electrical injection ⓘ |
| requires | cryogenic cooling for some terahertz designs ⓘ |
| typicalFabricationMethod |
metal-organic vapor phase epitaxy
ⓘ
molecular beam epitaxy ⓘ |
| typicalMaterials |
GaAs/AlGaAs
ⓘ
GaInAs/AlInAs on InP ⓘ |
| typicalStructure |
buried heterostructure
ⓘ
ridge waveguide ⓘ |
| uses | intersubband transitions within conduction band ⓘ |
| wavelengthRange | approximately 3–300 micrometres ⓘ |
Referenced by (2)
Full triples — surface form annotated when it differs from this entity's canonical label.