surface-barrier transistor

E122517

The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.

All labels observed (1)

Label Occurrences
surface-barrier transistor canonical 1

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Statements (34)

Predicate Object
instanceOf bipolar junction transistor
high-frequency transistor
high-speed transistor
transistor
designedFor high-frequency operation
high-speed switching
hasAdvantage faster switching speed
higher operating frequency than alloy-junction transistors
higher operating frequency than point-contact transistors
lower transit time through thin base region
hasApplication early high-frequency electronics
high-speed pulse circuits
radio-frequency amplification
hasBaseRegion very thin germanium base
hasContactGeometry closely spaced metal emitter and collector contacts on a thin base
hasContactType metal contacts
hasEra early 1950s
hasLimitation limited power handling compared to later silicon devices
sensitivity to temperature
hasOperatingPrinciple current flow controlled by surface electric fields at metal–semiconductor barriers
hasProperty discrete device
early transistor design
metal–semiconductor junctions
small base width
hasStructure surface-barrier structure
improvesOn alloy-junction transistor
point-contact transistor
operatesOnPrinciple minority-carrier transport across a thin base
supersededBy planar transistor
silicon bipolar junction transistor
usedIn early high-speed computing circuits
early radar and communication equipment
usedSemiconductorType germanium single crystal
usesMaterial germanium

How these facts were elicited

Referenced by (1)

Full triples — surface form annotated when it differs from this entity's canonical label.

Philco developed surface-barrier transistor