Triple
T6007168
| Position | Surface form | Disambiguated ID | Type / Status |
|---|---|---|---|
| Subject | Julius Edgar Lilienfeld |
E133739
|
entity |
| Predicate | notableFor |
P22
|
FINISHED |
| Object |
Lilienfeld field-effect transistor concept
The Lilienfeld field-effect transistor concept is an early theoretical design for a voltage-controlled semiconductor device that anticipated the modern field-effect transistor decades before it became practical.
|
E561825
|
NE FINISHED |
How this triple was built (4 steps)
Every LLM step that produced this triple, in pipeline order — named-entity classification, the disambiguation choices (the exact options shown, with the pick highlighted), and the generated description. The batch + timestamp of each is in the Provenance table below.
NER
Named-entity recognition
gpt-5-mini
Instruction
Given a phrase, classify it is english named entity (e.g., persons, organizations, works of art) in Latin script, or not (e.g., literals, dates, URLs, verbose phrases). For disambiguation, the statement where the phrase occurs as object is also given. Please return a JSON object with `phrase` (string, the phrase being analyzed) and `is_ne` (boolean, indicating whether the phrase is a Named Entity).
Input
Phrase: Lilienfeld field-effect transistor concept | Statement: [Julius Edgar Lilienfeld, notableFor, Lilienfeld field-effect transistor concept]
NED1
Entity disambiguation (via context triple)
gpt-5-mini-2025-08-07
Target entity: Lilienfeld field-effect transistor concept Context triple: [Julius Edgar Lilienfeld, notableFor, Lilienfeld field-effect transistor concept]
-
A.
surface-barrier transistor
The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
-
B.
Plenty of Room at the Bottom
"Plenty of Room at the Bottom" is a famous 1959 lecture by physicist Richard Feynman that is widely regarded as a foundational vision for the field of nanotechnology.
-
C.
Esaki diode
The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
-
D.
MOSFETs
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
-
E.
Shockley Semiconductor Laboratory
Shockley Semiconductor Laboratory was a pioneering Silicon Valley research and development company founded by Nobel laureate William Shockley that became the seed for many later semiconductor firms, including those started by the "traitorous eight."
- F. None of above. chosen
- G. Unsure - the case is ambiguous/there is not enough information to decide.
NEDg
Description generation
gpt-5.1
Instruction
Generate a one-sentence description of the target entity. You are given a context triple in the form (subject, predicate, object), where the object is the target entity. # Instructions Use the triple to infer relevant information about the entity. Describe the entity based on what is most defining, well-known. Avoid repeating the information from the triple, unless really essential. # Response Format Return only the sentence: "Description: [one-sentence description of the target entity]"
Input
Entity: Lilienfeld field-effect transistor concept Triple: [Julius Edgar Lilienfeld, notableFor, Lilienfeld field-effect transistor concept]
Generated description
The Lilienfeld field-effect transistor concept is an early theoretical design for a voltage-controlled semiconductor device that anticipated the modern field-effect transistor decades before it became practical.
NED2
Entity disambiguation (via description)
gpt-5-mini-2025-08-07
Target entity: Lilienfeld field-effect transistor concept Target entity description: The Lilienfeld field-effect transistor concept is an early theoretical design for a voltage-controlled semiconductor device that anticipated the modern field-effect transistor decades before it became practical.
-
A.
surface-barrier transistor
The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
-
B.
Plenty of Room at the Bottom
"Plenty of Room at the Bottom" is a famous 1959 lecture by physicist Richard Feynman that is widely regarded as a foundational vision for the field of nanotechnology.
-
C.
Esaki diode
The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
-
D.
MOSFETs
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
-
E.
Shockley Semiconductor Laboratory
Shockley Semiconductor Laboratory was a pioneering Silicon Valley research and development company founded by Nobel laureate William Shockley that became the seed for many later semiconductor firms, including those started by the "traitorous eight."
- F. None of above. chosen
Provenance (5 batches)
The batch behind each pipeline step, in order, with when it ran. Timestamps are batch-level — stages were processed in waves, so the object chain (NER → NED1 → NEDg → NED2) reads in order, but predicate / elicitation batches can sit in a different wave.
| Step | Stage | Batch ID | Status | When |
|---|---|---|---|---|
| creating | Elicitation | batch_69c00872444c8190bfaf1739dcec765c |
completed | March 22, 2026, 3:19 p.m. |
| NER | Named-entity recognition | batch_69c04f13d9908190a11d9bef8652db93 |
completed | March 22, 2026, 8:20 p.m. |
| NED1 | Entity disambiguation (via context triple) | batch_69c10895559081908b9efdd32ecef37f |
completed | March 23, 2026, 9:32 a.m. |
| NEDg | Description generation | batch_69c10b7467e88190955014bc060b20e4 |
completed | March 23, 2026, 9:44 a.m. |
| NED2 | Entity disambiguation (via description) | batch_69c10c0a001c81908e3ca53e9491ff9a |
completed | March 23, 2026, 9:46 a.m. |
Created at: March 22, 2026, 4:06 p.m.