Triple

T6007168
Position Surface form Disambiguated ID Type / Status
Subject Julius Edgar Lilienfeld E133739 entity
Predicate notableFor P22 FINISHED
Object Lilienfeld field-effect transistor concept
The Lilienfeld field-effect transistor concept is an early theoretical design for a voltage-controlled semiconductor device that anticipated the modern field-effect transistor decades before it became practical.
E561825 NE FINISHED

How this triple was built (4 steps)

Every LLM step that produced this triple, in pipeline order — named-entity classification, the disambiguation choices (the exact options shown, with the pick highlighted), and the generated description. The batch + timestamp of each is in the Provenance table below.

NER Named-entity recognition gpt-5-mini
Instruction
Given a phrase, classify it is english named entity (e.g., persons, organizations, works of art) in Latin script, or not (e.g., literals, dates, URLs, verbose phrases). For disambiguation, the statement where the phrase occurs as object is also given. Please return a JSON object with `phrase` (string, the phrase being analyzed) and `is_ne` (boolean, indicating whether the phrase is a Named Entity).
Input
Phrase: Lilienfeld field-effect transistor concept | Statement: [Julius Edgar Lilienfeld, notableFor, Lilienfeld field-effect transistor concept]
NED1 Entity disambiguation (via context triple) gpt-5-mini-2025-08-07
Target entity: Lilienfeld field-effect transistor concept
Context triple: [Julius Edgar Lilienfeld, notableFor, Lilienfeld field-effect transistor concept]
  • A. surface-barrier transistor
    The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
  • B. Plenty of Room at the Bottom
    "Plenty of Room at the Bottom" is a famous 1959 lecture by physicist Richard Feynman that is widely regarded as a foundational vision for the field of nanotechnology.
  • C. Esaki diode
    The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
  • D. MOSFETs
    MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
  • E. Shockley Semiconductor Laboratory
    Shockley Semiconductor Laboratory was a pioneering Silicon Valley research and development company founded by Nobel laureate William Shockley that became the seed for many later semiconductor firms, including those started by the "traitorous eight."
  • F. None of above. chosen
  • G. Unsure - the case is ambiguous/there is not enough information to decide.
NEDg Description generation gpt-5.1
Instruction
Generate a one-sentence description of the target entity. 
You are given a context triple in the form (subject, predicate, object), where the object is the target entity. 
# Instructions
Use the triple to infer relevant information about the entity. Describe the entity based on what is most defining, well-known. 
Avoid repeating the information from the triple, unless really essential.
# Response Format
Return only the sentence: "Description: [one-sentence description of the target entity]"
Input
Entity: Lilienfeld field-effect transistor concept
Triple: [Julius Edgar Lilienfeld, notableFor, Lilienfeld field-effect transistor concept]
Generated description
The Lilienfeld field-effect transistor concept is an early theoretical design for a voltage-controlled semiconductor device that anticipated the modern field-effect transistor decades before it became practical.
NED2 Entity disambiguation (via description) gpt-5-mini-2025-08-07
Target entity: Lilienfeld field-effect transistor concept
Target entity description: The Lilienfeld field-effect transistor concept is an early theoretical design for a voltage-controlled semiconductor device that anticipated the modern field-effect transistor decades before it became practical.
  • A. surface-barrier transistor
    The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
  • B. Plenty of Room at the Bottom
    "Plenty of Room at the Bottom" is a famous 1959 lecture by physicist Richard Feynman that is widely regarded as a foundational vision for the field of nanotechnology.
  • C. Esaki diode
    The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
  • D. MOSFETs
    MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
  • E. Shockley Semiconductor Laboratory
    Shockley Semiconductor Laboratory was a pioneering Silicon Valley research and development company founded by Nobel laureate William Shockley that became the seed for many later semiconductor firms, including those started by the "traitorous eight."
  • F. None of above. chosen

Provenance (5 batches)

The batch behind each pipeline step, in order, with when it ran. Timestamps are batch-level — stages were processed in waves, so the object chain (NER → NED1 → NEDg → NED2) reads in order, but predicate / elicitation batches can sit in a different wave.

Step Stage Batch ID Status When
creating Elicitation batch_69c00872444c8190bfaf1739dcec765c completed March 22, 2026, 3:19 p.m.
NER Named-entity recognition batch_69c04f13d9908190a11d9bef8652db93 completed March 22, 2026, 8:20 p.m.
NED1 Entity disambiguation (via context triple) batch_69c10895559081908b9efdd32ecef37f completed March 23, 2026, 9:32 a.m.
NEDg Description generation batch_69c10b7467e88190955014bc060b20e4 completed March 23, 2026, 9:44 a.m.
NED2 Entity disambiguation (via description) batch_69c10c0a001c81908e3ca53e9491ff9a completed March 23, 2026, 9:46 a.m.
Created at: March 22, 2026, 4:06 p.m.