Triple

T2979607
Position Surface form Disambiguated ID Type / Status
Subject ON Semiconductor E80478 entity
Predicate product P490 FINISHED
Object MOSFETs
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
 E317284 NE FINISHED

Disambiguation candidates (2 decisions)

The exact options the model was shown at each disambiguation step, with the option it chose highlighted — the evidence behind this triple's disambiguated ids.

NED1 Entity disambiguation (via context triple) gpt-5-mini-2025-08-07 
Target entity: MOSFETs
Context triple: [ON Semiconductor, product, MOSFETs]
  • A. MMICs
    MMICs (Monolithic Microwave Integrated Circuits) are compact, high-frequency integrated circuits used in microwave and millimeter-wave applications such as radar, satellite communications, and wireless systems.
  • B. surface-barrier transistor
    The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
  • C. BJT
    BJT is an abbreviation for Beijing Time, the standard time used throughout mainland China.
  • D. FET
    FET (Further-eastern European Time) is a time zone used in parts of Eastern Europe and Western Russia, typically corresponding to UTC+3.
  • E. Esaki diode
    The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
  • F. None of above. chosen
  • G. Unsure - the case is ambiguous/there is not enough information to decide.
NED2 Entity disambiguation (via description) gpt-5-mini-2025-08-07 
Target entity: MOSFETs
Target entity description: MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
  • A. MMICs
    MMICs (Monolithic Microwave Integrated Circuits) are compact, high-frequency integrated circuits used in microwave and millimeter-wave applications such as radar, satellite communications, and wireless systems.
  • B. surface-barrier transistor
    The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
  • C. BJT
    BJT is an abbreviation for Beijing Time, the standard time used throughout mainland China.
  • D. FET
    FET (Further-eastern European Time) is a time zone used in parts of Eastern Europe and Western Russia, typically corresponding to UTC+3.
  • E. Esaki diode
    The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
  • F. None of above. chosen

Provenance (5 batches)

Stage Batch ID Job type Status
creating batch_69ad8b15f6ac8190be5fd16a33edcb4f elicitation completed
NER batch_69ad999cca40819082e2d6d10bdb7872 ner completed
NED1 batch_69b108ef607c8190865b079beb1b6da5 ned_source_triple completed
NED2 batch_69b10c43a7c48190b63a7b3f0f180d44 ned_description completed
NEDg batch_69b10bc71c708190b1e620d41278c3e0 nedg completed
Created at: March 8, 2026, 2:58 p.m.