Triple
T13319839
| Position | Surface form | Disambiguated ID | Type / Status |
|---|---|---|---|
| Subject | IGBT |
E317285
|
entity |
| Predicate | hasFullName |
P16
|
FINISHED |
| Object | Insulated Gate Bipolar Transistor |
E317285
|
NE FINISHED |
How this triple was built (2 steps)
Every LLM step that produced this triple, in pipeline order — named-entity classification, the disambiguation choices (the exact options shown, with the pick highlighted), and the generated description. The batch + timestamp of each is in the Provenance table below.
NER
Named-entity recognition
gpt-5-mini
Instruction
Given a phrase, classify it is english named entity (e.g., persons, organizations, works of art) in Latin script, or not (e.g., literals, dates, URLs, verbose phrases). For disambiguation, the statement where the phrase occurs as object is also given. Please return a JSON object with `phrase` (string, the phrase being analyzed) and `is_ne` (boolean, indicating whether the phrase is a Named Entity).
Input
Phrase: Insulated Gate Bipolar Transistor | Statement: [IGBT, hasFullName, Insulated Gate Bipolar Transistor]
NED1
Entity disambiguation (via context triple)
gpt-5-mini-2025-08-07
Target entity: Insulated Gate Bipolar Transistor Context triple: [IGBT, hasFullName, Insulated Gate Bipolar Transistor]
-
A.
IGBTs
chosen
IGBTs (Insulated Gate Bipolar Transistors) are high-efficiency semiconductor power switches widely used in applications such as motor drives, inverters, and power supplies to control large voltages and currents.
-
B.
MOSFETs
MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are semiconductor devices widely used for efficient electronic switching and amplification in power management and digital circuits.
-
C.
Esaki diode
The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
-
D.
surface-barrier transistor
The surface-barrier transistor is an early high-frequency, high-speed transistor design that used metal contacts formed on a very thin germanium base, enabling faster operation than earlier point-contact and alloy-junction transistors.
-
E.
BJT
BJT is an abbreviation for Beijing Time, the standard time used throughout mainland China.
- F. None of above.
- G. Unsure - the case is ambiguous/there is not enough information to decide.
Provenance (3 batches)
The batch behind each pipeline step, in order, with when it ran. Timestamps are batch-level — stages were processed in waves, so the object chain (NER → NED1 → NEDg → NED2) reads in order, but predicate / elicitation batches can sit in a different wave.
| Step | Stage | Batch ID | Status | When |
|---|---|---|---|---|
| creating | Elicitation | batch_69d806b4d62c81908d4ced1665414be5 |
completed | April 9, 2026, 8:06 p.m. |
| NER | Named-entity recognition | batch_69d990faa95481908a7fd297959c062e |
completed | April 11, 2026, 12:08 a.m. |
| NED1 | Entity disambiguation (via context triple) | batch_69f716ee695c81909ffeeb0901ee66c1 |
completed | May 3, 2026, 9:35 a.m. |
Created at: April 9, 2026, 9:29 p.m.