Triple

T13217669
Position Surface form Disambiguated ID Type / Status
Subject Leo Esaki E314661 entity
Predicate knownFor P22 FINISHED
Object Esaki diode E186747 NE FINISHED

Disambiguation candidates (1 decision)

The exact options the model was shown at each disambiguation step, with the option it chose highlighted — the evidence behind this triple's disambiguated ids.

NED1 Entity disambiguation (via context triple) gpt-5-mini-2025-08-07
Target entity: Esaki diode
Context triple: [Leo Esaki, knownFor, Esaki diode]
  • A. Esaki diode chosen
    The Esaki diode is a heavily doped semiconductor tunnel diode that exhibits negative differential resistance, enabling high-speed and microwave-frequency electronic applications.
  • B. Gunn diode
    A Gunn diode is a semiconductor device that generates microwave-frequency oscillations by exploiting the Gunn effect in materials like gallium arsenide, commonly used in high-frequency oscillators and radar systems.
  • C. Shockley diode equation
    The Shockley diode equation is a fundamental formula in semiconductor physics that describes the current–voltage relationship of an ideal p–n junction diode.
  • D. resonant tunneling diode
    A resonant tunneling diode is a quantum-effect semiconductor device that exploits resonant tunneling through double potential barriers to achieve negative differential resistance and ultra-fast switching.
  • E. gallium arsenide
    Gallium arsenide is a compound semiconductor material known for its high electron mobility and direct bandgap, widely used in high-frequency and optoelectronic devices such as microwave integrated circuits, LEDs, and laser diodes.
  • F. None of above.
  • G. Unsure - the case is ambiguous/there is not enough information to decide.

Provenance (3 batches)

Stage Batch ID Job type Status
creating batch_69d806affc688190a25b6ccc588e9c72 elicitation completed
NER batch_69d98cf392e08190949ee4d194566395 ner completed
NED1 batch_69f6ff2085f88190be8cfc309d21f9cb ned_source_triple completed
Created at: April 9, 2026, 9:18 p.m.