Gunn diode
E708818
A Gunn diode is a semiconductor device that generates microwave-frequency oscillations by exploiting the Gunn effect in materials like gallium arsenide, commonly used in high-frequency oscillators and radar systems.
Statements (49)
| Predicate | Object |
|---|---|
| instanceOf |
microwave oscillator device
ⓘ
semiconductor device ⓘ |
| discoveredBy | J. B. Gunn NERFINISHED ⓘ |
| discoveredYear | 1963 ⓘ |
| doesNotRelyOn | p-n junction ⓘ |
| exhibitsProperty | negative differential resistance ⓘ |
| exploitsEffect | Gunn effect NERFINISHED ⓘ |
| generates |
RF power
ⓘ
microwave oscillations ⓘ |
| hasAdvantage |
compact size
ⓘ
no need for external resonant cavity in some designs ⓘ relatively low cost for microwave generation ⓘ simple structure ⓘ |
| hasConductionType | bulk negative differential resistance ⓘ |
| hasLimitation |
efficiency decreases at very high frequencies
ⓘ
limited output power compared to some vacuum devices ⓘ |
| hasRegion | active n-type region ⓘ |
| hasStructure | n+–n–n+ structure ⓘ |
| isBasedOn | transferred electron mechanism ⓘ |
| isClassifiedAs |
transferred electron device
ⓘ
two-terminal device ⓘ |
| isUsedAs |
frequency reference in some microwave systems
ⓘ
local oscillator ⓘ microwave source ⓘ |
| isUsedIn |
automatic door openers
ⓘ
industrial level and distance measurement sensors ⓘ solid-state radar front-ends ⓘ |
| namedAfter | J. B. Gunn NERFINISHED ⓘ |
| operatesInFrequencyRange |
microwave frequencies
ⓘ
millimeter-wave frequencies ⓘ |
| operatingMode |
limited space-charge accumulation mode
ⓘ
quenched domain mode ⓘ transit-time domain formation ⓘ |
| requiresBiasCondition | high electric field across active region ⓘ |
| requiresBiasType | DC bias ⓘ |
| typicalFrequencyRange | 1 GHz to 100 GHz ⓘ |
| usedIn |
frequency generators
ⓘ
intruder alarm systems ⓘ local oscillators in receivers ⓘ microwave communication links ⓘ microwave oscillators ⓘ microwave test equipment ⓘ microwave transceivers ⓘ motion detectors ⓘ police radar speed guns ⓘ radar systems ⓘ |
| usesMaterial |
gallium arsenide
ⓘ
gallium nitride ⓘ indium phosphide NERFINISHED ⓘ |
Referenced by (1)
Full triples — surface form annotated when it differs from this entity's canonical label.